WebFeb 24, 2024 · Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron nitride, which … WebJun 11, 2024 · Molybdenum disulfide (MoS 2) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities.In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, …
Spatially Resolved Polarization Manipulation of Ferroelectricity in ...
WebIt is reported that robust ferroelectric tunnel junctions can be employed to design high-performance electronic synapses. These devices show an excellent memristor function with many reproducible states (≈200) through gradual ferroelectric domain switching. Both short- and long-term plasticity can be emulated by finely tuning the applied ... WebPrevious studies indicate that uniaxial polarization only exists along the armchair direction of h-BN, 17,44 and the piezoelectric properties were determined by stretching the structure … th3gadfly
Ferroelectricity in hBN intercalated double-layer graphene
WebFerroelectric materials are attractive because they exhibit charge-generating piezoelectric responses an order of magnitude larger than those of materials such as aluminum nitride … WebTunable ferroelectricity in hBN intercalated twisted double-layer graphene. Van der Waals (vdW) assembly of two-dimensional materials has been long recognized as a powerful tool to create unique systems with properties that cannot be found in natural compounds. However, among the variety of vdW heterostructures and their various properties ... WebAug 4, 2024 · The unique 2D characteristics of hBN enable it to construct ferroelectric field-effect transistors and other devices by the tear-and-stack method [9, 10]. The optical and electrical properties of hBN are very different from that of graphene. Due to the "zero bandgap" structure of graphene, its application in the photoelectronic field is limited. symbol table and literal table